دیتاشیت BUK9E1R6-30E,127

BUK9E1R6-30E

مشخصات دیتاشیت

نام دیتاشیت BUK9E1R6-30E
حجم فایل 342.167 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

دانلود دیتاشیت BUK9E1R6-30E

BUK9E1R6-30E Datasheet

مشخصات

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 113nC @ 5V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 16150pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Base Part Number: BUK9
  • detail: N-Channel 30V 120A (Tc) 349W (Tc) Through Hole I2PAK

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